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J.M. Dumas

Centre national d'études des télécommunications

14

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81

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Étude des pièges dans les transistors à haute mobilité électronique sur GaAs à l'aide de la méthode dite de “relaxation isotherme”. Corrélation avec les anomalies de fonctionnement

1993 Journal De Physique Iii
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Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation

1992 Solid-state Electronics
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Stability of interfaces in pseudomorphic InGaAs HEMTs

1992 Quality and Reliability Engineering International
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Degradation of ion implanted GaAs MESFETs

1991 Quality and Reliability Engineering International
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Charge control in a Laser Processed superlattice High Electron Mobility Transistor (LPHEMT)

1989 Solid-state Electronics
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Etude des effets parasites affectant le fonctionnement des transistors à effet de champ à gaz d'électrons bidimensionnel

1989
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An Investigation into the Parasitic Effects Affecting the Operation of HEMT-based ICs

1989 ESSDERC | European Solid-State Device Research Conference
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Development of gate-lag effect on GaAs power MESFETs during aging

1987 Electronics Letters
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Dégradation des MESFETs GaAs : mécanismes liés à l'interface GaAs/SiO2

1987
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Failure Mechanisms Study of a Standard GaAs IC Technology

1987 ESSDERC | European Solid-State Device Research Conference
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