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J. F. Bresse

Centre national d'études des télécommunications

19

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104

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Etching procedures of GaAs: Cathodoluminescence study of the induced damages and of the recovering techniques

1990 Journal of Vacuum Science & Technology B
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RIE of a T‐Shape Refractory Ohmic Contact for Self‐Aligned Heterojunction Bipolar Transistor

1990 Journal of The Electrochemical Society
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Ohmic Contacts to n-type GaAs Using GeMoW Metallizati1on for Self-aliged Processing

1989 Journal of Pediatric Health Care
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Ohmic Contacts to n-type GaAs Using GeMoW Metallizati1on for Self-aliged Processing

1989 ESSDERC | European Solid-State Device Research Conference
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Use of scanning electron acoustic microscopy for the analysis of III–V compound devices

1989 Materials Science and Engineering A-structural Materials Properties Microstructure and Processing
- J. F. Bresse
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Characterization of AlGaAs/GaAs heterojunction bipolar transistors and circuits by localized filtered low‐temperature cathodoluminescence

1989 Journal of Applied Physics
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Dégradation des MESFETs GaAs : mécanismes liés à l'interface GaAs/SiO2

1987
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Molybdenum germanide ohmic contact to n-GaAs

1987 Electronics Letters
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Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction Bipolar Transistors

1986
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Comprehensive study of AuMn p‐type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

1986 Journal of Applied Physics
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Citations (32)