Étude des pièges dans les transistors à haute mobilité électronique sur GaAs à l'aide de la méthode dite de “relaxation isotherme”. Corrélation avec les anomalies de fonctionnement

Trap-related parasitic effects penalizing the GaAs high electron mobility transistor have been studied by means of isothermal relaxation experiment. Basic principles together with improvements are briefly described. Once the method validated, typical cases are reported. It appears as a usefull investigation tool supporting the choice of high speed electron device technologies to be introduced into systems