An Investigation into the Parasitic Effects Affecting the Operation of HEMT-based ICs
1989
A study of the parasitic effects pentalizing the operation of two-dimensional electron gas field effect transistors (HEMTs) has been carried-out. In this paper, we present the results - experimental characterizations together with modellinig - obtained for two major process-dependent parasitics: kink effect and beckgatinig effect.
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