Development of gate-lag effect on GaAs power MESFETs during aging
1987
We have observed a gradual degradation of the output power not accompanied by drifts in the classical basic static parameters of a GaAs power MESFET. We report in the letter that this phenomenon can be explained by the development, during aging, of the gate-lag effect.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
6
References
21
Citations
NaN
KQI