Degradation of ion implanted GaAs MESFETs
1991
Ion-implanted Si-doped GaAs MESFETs with 1μm and 5μm gate lengths have been subjected to DC life testing at temperatures of 220°C and 250°C for 4000 and 2250 h, respectively. Two failure mechanisms have been identified:
1
Diffusion of platinum from the gate contact into the n-GaAs channel.
2
An increase of deep-level trapping, specifically of EL2 (Ea=0.8 eV), in the channel region.
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