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Balaji Jayaraman
Balaji Jayaraman
GlobalFoundries
Transistor
High-κ dielectric
Electronic engineering
Computer science
Voltage
4
Papers
17
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14nm FinFET 1.5Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing
2019
Eric D. Hunt-Schroeder
Darren L. Anand
John A. Fifield
Michael Roberge
Dale E. Pontius
Mark D. Jacunski
Kevin Batson
Matthew Deming
Faraz Khan
Dan Moy
Alberto Cestero
Robert Katz
Zakariae Chbili
Edmund Banghart
L. Jiang
Balaji Jayaraman
Rajesh Reddy Tummuru
Ramesh Raghavan
Amit Mishra
Norman Robson
Toshiaki Kirihata
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Citations (4)
80-kb Logic Embedded High-K Charge Trap Transistor-Based Multi-Time-Programmable Memory With No Added Process Complexity
2018
IEEE Journal of Solid-state Circuits
Balaji Jayaraman
Derek Leu
Janakiraman Viraraghavan
Alberto Cestero
Ming Yin
John Golz
Rajesh Reddy Tummuru
Ramesh Raghavan
Dan Moy
Thejas Kempanna
Faraz Khan
Toshiaki Kirihata
Subramanian S. Iyer
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Citations (5)
80Kb 10ns read cycle logic Embedded High-K charge trap Multi-Time-Programmable Memory scalable to 14nm FIN with no added process complexity
2016
VLSIC | Symposium on VLSI Circuits
Janakiraman Viraraghavan
Derek Leu
Balaji Jayaraman
Alberto Cestero
Robert E. Kilker
Ming Yin
John Golz
Rajesh Reddy Tummuru
Ramesh Raghavan
Dan Moy
Thejas Kempanna
Faraz Khan
Toshiaki Kirihata
Subramanian S. Iyer
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Citations (8)
Dual-bit 3-T high-density array MTPROM
2016
Ramesh Raghavan
Balaji Jayaraman
Janakiraman Viraraghavan
Thejas Kempanna
Rajesh Reddy Tummuru
Toshiaki Kirihata
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