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John Golz
John Golz
GlobalFoundries
Electronic engineering
Computer science
High-κ dielectric
Transistor
Scalability
4
Papers
74
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80-kb Logic Embedded High-K Charge Trap Transistor-Based Multi-Time-Programmable Memory With No Added Process Complexity
2018
IEEE Journal of Solid-state Circuits
Balaji Jayaraman
Derek Leu
Janakiraman Viraraghavan
Alberto Cestero
Ming Yin
John Golz
Rajesh Reddy Tummuru
Ramesh Raghavan
Dan Moy
Thejas Kempanna
Faraz Khan
Toshiaki Kirihata
Subramanian S. Iyer
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Citations (5)
Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias
2016
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Toshiaki Kirihata
John Golz
Matthew R. Wordeman
Pooja Batra
Gary W. Maier
Norman Robson
Troy L. Graves-Abe
Daniel George Berger
Subramanian S. Iyer
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Citations (8)
80Kb 10ns read cycle logic Embedded High-K charge trap Multi-Time-Programmable Memory scalable to 14nm FIN with no added process complexity
2016
VLSIC | Symposium on VLSI Circuits
Janakiraman Viraraghavan
Derek Leu
Balaji Jayaraman
Alberto Cestero
Robert E. Kilker
Ming Yin
John Golz
Rajesh Reddy Tummuru
Ramesh Raghavan
Dan Moy
Thejas Kempanna
Faraz Khan
Toshiaki Kirihata
Subramanian S. Iyer
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Citations (8)
A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
2008
IEEE Journal of Solid-state Circuits
John E. Barth
William Robert Reohr
Paul C. Parries
Gregory J. Fredeman
John Golz
Stanley E. Schuster
Richard E. Matick
Hillery C. Hunter
Charles Tanner
Joseph Harig
Kim Hoki
Babar A. Khan
John A. Griesemer
R.P. Havreluk
Kenji Yanagisawa
Toshiaki Kirihata
Subramanian S. Iyer
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Citations (53)
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