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Eric D. Hunt-Schroeder
Eric D. Hunt-Schroeder
GlobalFoundries
Transistor
Computer science
Adder
Electrical engineering
High-κ dielectric
4
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5
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14nm FinFET 1.5Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing
2019
Eric D. Hunt-Schroeder
Darren L. Anand
John A. Fifield
Michael Roberge
Dale E. Pontius
Mark D. Jacunski
Kevin Batson
Matthew Deming
Faraz Khan
Dan Moy
Alberto Cestero
Robert Katz
Zakariae Chbili
Edmund Banghart
L. Jiang
Balaji Jayaraman
Rajesh Reddy Tummuru
Ramesh Raghavan
Amit Mishra
Norman Robson
Toshiaki Kirihata
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Citations (4)
Behavioral Modeling of a Charge Trap Transistor One Time Programmable Memory.
2019
NATW | North Atlantic Test Workshop
Eric D. Hunt-Schroeder
Darren L. Anand
Edward Hwang
Aaron Cummings
Matthew Deming
Michael Roberge
Michael A. Ziegerhofer
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A Multi-Time Programmable Memory Technology in a Native 14nm FINFET Process using Charge Trap Transistors (CTTs)
2019
Faraz Khan
Eric D. Hunt-Schroeder
Dan Moy
Darren L. Anand
Robert Katz
Derek Leu
John A. Fifield
N. Robson
Sebastian Ventrone
Toshiaki Kirihata
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14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming
2018
VLSIC | Symposium on VLSI Circuits
Eric D. Hunt-Schroeder
Darren L. Anand
John A. Fifield
Mark D. Jacunski
Michael Roberge
Dale Pontius
Kevin Batson
Toshiaki Kirihata
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