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Hans-Peter Moll
Hans-Peter Moll
Qimonda
Electrical engineering
Capacitor
Electronic engineering
Trench
Dram
2
Papers
2
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0
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Self-Alignment Techniques to enable 40nm Trench Capacitor DRAM Technologies with 3-D Array Transistor and Single-Sided Strap
2007
VLSIT | Symposium on VLSI Technology
Hans-Peter Moll
Jessica Hartwich
Arnd Scholz
D. Temmler
Andrew Graham
S. Slesazek
G. Wedler
Lars Heineck
Tobias Mono
U. Zimmermann
K. Schupke
F. Ludwig
Inho Park
T. Tran
W. Muller
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A novel cell arrangement enabling Trench DRAM scaling to 40nm and beyond
2007
IEDM | International Electron Devices Meeting
Lars Heineck
Werner Graf
Martin Popp
D. Savignac
Hans-Peter Moll
R. Tews
D. Temmler
Gouri Sankar Kar
J. Schmid
M. Rouhanian
Ines Uhlig
Matthias Goldbach
Erhard Landgraf
Lars Dreeskornfeld
M. Drubba
S. Lukas
D. Weinmann
Wolfgang Roesner
W. Mueller
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