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Wilman Tsai
Wilman Tsai
Intel
Optoelectronics
Metal gate
Oxide
Annealing (metallurgy)
Physical vapor deposition
2
Papers
5
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0
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Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
2008
Applied Physics Letters
Injo Ok
H. Kim
Manhong Zhang
F. Zhu
Sung Il Park
Jung Hwan Yum
Han Zhao
Domingo Garcia
Prashant Majhi
N. Goel
Wilman Tsai
C. K. Gaspe
M. B. Santos
Jack C. Lee
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Citations (5)
Metal gated self-aligned gate-forward nMOSFET with ≤0.8 nm EOT fabricated by in-situ Ar/O 2 plasma oxidation of PVD Hf
2005
S. Koveshnikov
Wilman Tsai
Manhong Zhang
Chang Hwan Choi
Jack C. Lee
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