Old Web
English
Sign In
Acemap
>
Paper
>
Metal gated self-aligned gate-forward nMOSFET with ≤0.8 nm EOT fabricated by in-situ Ar/O 2 plasma oxidation of PVD Hf
Metal gated self-aligned gate-forward nMOSFET with ≤0.8 nm EOT fabricated by in-situ Ar/O 2 plasma oxidation of PVD Hf
2005
S. Koveshnikov
Wilman Tsai
Manhong Zhang
Chang Hwan Choi
Jack C. Lee
Keywords:
Self-aligned gate
Metal
Plasma
Optoelectronics
Materials science
In situ
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]