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Jung Hwan Yum
Jung Hwan Yum
University of Texas at Austin
Analytical chemistry
Equivalent oxide thickness
Metal gate
Optoelectronics
Oxide
2
Papers
20
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Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric
2008
Electrochemical and Solid State Letters
Han Zhao
Davood Shahrjerdi
F. Zhu
Hyoung Sub Kim
Injo Ok
Manhong Zhang
Jung Hwan Yum
Sanjay K. Banerjee
Jack C. Lee
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Citations (15)
Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
2008
Applied Physics Letters
Injo Ok
H. Kim
Manhong Zhang
F. Zhu
Sung Il Park
Jung Hwan Yum
Han Zhao
Domingo Garcia
Prashant Majhi
N. Goel
Wilman Tsai
C. K. Gaspe
M. B. Santos
Jack C. Lee
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Citations (5)
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