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Manhong Zhang

University of Texas at Austin

65

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Device characterization and reliability of Dysprosium (Dy) incorporated HfO2 CMOS devices and its application to high-k NAND flash memory

2010
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Self-aligned n-channel GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization

2009 Microelectronic Engineering
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Gate stacks with high-k dielectrics and metal electrodes : fermi level pinning and dipoles induced by lanthanide oxides

2009
- Manhong Zhang
- Jack C. Lee
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Charge Trapping and Wearout Characteristics of Self-Aligned Enhancement-Mode GaAs n-MOSFET with Si Interface Passivation Layer and HfO2 Gate Oxide

2008 CSICS | Compound Semiconductor Integrated Circuit Symposium
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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

2008 Applied Physics Letters
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The Mechanism of the Negative V fb Shift by Capping a Thin Layer of Me 2 O 3 (Me=Gd, Y or Dy)

2008 DRC | Device Research Conference
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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

2008 Applied Physics Letters
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Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

2008 Applied Physics Letters
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Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric

2008 Electrochemical and Solid State Letters
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Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

2008 Applied Physics Letters
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