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Domingo Garcia
Domingo Garcia
SEMATECH
Physics
Optoelectronics
Annealing (metallurgy)
Physical vapor deposition
Analytical chemistry
4
Papers
76
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Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer
2008
Applied Physics Letters
I. Ok
Hyoung Sub Kim
Manhong Zhang
F. Zhu
Sung Il Park
Jung Hwan Yum
Han Zhao
Domingo Garcia
Prashant Majhi
Jack C. Lee
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Citations (10)
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer
2008
Applied Physics Letters
I. Ok
Hyoung Sub Kim
Manhong Zhang
F. Zhu
S. Park
Jung Hwan Yum
Han Zhao
Domingo Garcia
Prashant Majhi
Niti Goel
W. Tsai
Chomani Gaspe
M. B. Santos
Jack Lee
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Citations (59)
Self-Aligned n-channel MOSFET on InP and In 0.53 Ga 0.47 As Using Physical Vapor Deposition HfO 2 and Silicon Interface Passivation Layer
2008
DRC | Device Research Conference
I. Ok
Hyoung Sub Kim
Manhong Zhang
F. Zhu
Han Zhao
S. Park
Jung Hwan Yum
Domingo Garcia
Prashant Majhi
Niti Goel
W. Tsai
Chomani Gaspe
M. B. Santos
Jack Lee
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Citations (2)
Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
2008
Applied Physics Letters
Injo Ok
H. Kim
Manhong Zhang
F. Zhu
Sung Il Park
Jung Hwan Yum
Han Zhao
Domingo Garcia
Prashant Majhi
N. Goel
Wilman Tsai
C. K. Gaspe
M. B. Santos
Jack C. Lee
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Citations (5)
1