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Richard L. Woodin

Fairchild Semiconductor International, Inc.

20

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Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 Materials Science Forum
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Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current

2018 Materials Science Forum
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Doping engineering to enhance performance of a silicon carbide power device

2016 WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
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Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

2016 Materials Science Forum
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Temperature dependent design of Silicon Carbide Schottky diodes

2014 WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
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Increase of SiC Substrate Resistance Induced by Annealing

2010 Materials Science Forum
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The Impact of Schottky Barrier Tunneling on SiC-JBS Performance

2009 Materials Science Forum
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A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch

2008 Materials Science Forum
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Avalanche protection for components wide band gap

2007
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Surface Roughness in Silicon Carbide Technology

2006
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