Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.