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J. Shovlin
J. Shovlin
Fairchild Semiconductor International, Inc.
Electronic engineering
Silicon carbide
Materials science
Composite material
Diode
5
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14
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Increase of SiC Substrate Resistance Induced by Annealing
2010
Materials Science Forum
Thomas Straubinger
Richard L. Woodin
Tony Witt
J. Shovlin
Gary M. Dolny
P. Sasahara
Erwin Schmitt
Arnd Dietrich Weber
Jeff B. Casady
Janna R. B. Casady
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The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
2009
Materials Science Forum
Gary M. Dolny
Richard L. Woodin
Tony Witt
J. Shovlin
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A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch
2008
Materials Science Forum
Wonsuk Choi
Sung Mo Young
Richard L. Woodin
A.W. Witt
J. Shovlin
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Silicon carbide: barriers to manufacturable devices
2005
ASMC | Advanced Semiconductor Manufacturing Conference
J. Shovlin
Richard L. Woodin
T. Witt
Gary M. Dolny
Praveen Muraleedharan Shenoy
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Silicon carbide in a silicon world: introducing wide band gap semiconductor production into a silicon fab
2004
ASMC | Advanced Semiconductor Manufacturing Conference
J. Shovlin
Richard L. Woodin
T. Witt
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Citations (2)
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