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Nobuyuki Horikawa
Nobuyuki Horikawa
Panasonic
Electronic engineering
Diode
MOSFET
Schottky diode
Transistor
6
Papers
54
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Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design
2018
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Atsushi Ohoka
Masao Uchida
Tsutomu Kiyosawa
Nobuyuki Horikawa
Kouichi Saitou
Yoshihiko Kanzawa
Haruyuki Sorada
Kazuyuki Sawada
Tetsuzo Ueda
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Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
2016
Microelectronics Reliability
Osamu Kusumoto
Atsushi Ohoka
Nobuyuki Horikawa
Kohtaro Tanaka
Masahiko Niwayama
Masao Uchida
Yoshihiko Kanzawa
Kazuyuki Sawada
Tetsuzo Ueda
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A novel duality-based modeling methodology for reverse current-voltage characteristics of SiC
2014
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
Tetsuya Yamamoto
Tetsuro Sawai
Kenji Mizutani
Nobuyuki Otsuka
Eiji Fujii
Nobuyuki Horikawa
Yoshihiko Kanzawa
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レーザ光源、画像表示装置、及び加工装置
2009
Hiroyuki Furuya
Nobuyuki Horikawa
Shinichi Kadowaki
Koichi Kusukame
Kiminori Mizuuchi
Akihiro Morikawa
Tomoya Sugita
Kazuhisa Yamamoto
hiroyuki furuya
nobuyuki horikawa
kazuhisa yamamoto
tomoya sugita
ken hirosi morikawa
kouiti kusunoki kame
kou ten mizuuti
sin'iti kadowaki
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