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Tsutomu Kiyosawa

Panasonic

4

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Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design

2018 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Élément semi-conducteur au carbure de silicium et son procédé de fabrication

2012
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Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode

2011 IEDM | International Electron Devices Meeting
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Citations (34)