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Jong-Ho Bae

Seoul National University

67

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471

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Spiking Neural Networks with Time-to-First-Spike Coding Using TFT-type Synaptic Device Model

2021 IEEE Access
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Ferroelectric HfO$_2$ Memory Transistors with High-$\kappa$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles.

2021 arXiv: Applied Physics
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Pulse-Width Modulation Neuron Implemented by Single Positive-Feedback Device

2021 arXiv: Emerging Technologies
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Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

2021
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Study on the Manufacturing of Ultra-Fine Ore Briquettes for Charging in a Sintering Machine

2021 Korean Journal of Metals and Materials
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Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 IEEE Electron Device Letters
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Ferroelectric HfO2 Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

2021 IEEE Electron Device Letters
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Highly Stable Si MOSFET-type Humidity Sensor with Ink-jet Printed Graphene Quantum Dots Sensing Layer

2021 Sensors and Actuators B-chemical
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Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks

2020 Journal of Nanoscience and Nanotechnology
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Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells

2020 Journal of Nanoscience and Nanotechnology
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