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Chenming Hu

University of California, Berkeley
IBM

1089

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Ferroelectric HfO$_2$ Memory Transistors with High-$\kappa$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles.

2021 arXiv: Applied Physics
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Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

2021
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Energy Storage and Reuse in Negative Capacitance

2021 IEEE Transactions on Electron Devices
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Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

2021 IEEE Transactions on Electron Devices
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Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures

2021 IEEE Transactions on Electron Devices
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Route Planning of Helicopters Spraying Operations in Multiple Forest Areas

2021 Forests
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Ferroelectric HfO2 Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

2021 IEEE Electron Device Letters
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Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance

2021 Applied Physics Letters
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Modeling of Current Mismatch and 1/f Noise for Halo-Implanted Drain-Extended MOSFETs

2020 IEEE Transactions on Electron Devices
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Anomalous Subthreshold Behaviors in Negative Capacitance Transistors

2020 arXiv: Applied Physics
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