Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

In this work, the low-frequency noise (LFN) characteristics of the 3-terminal ${n}$ -type gated Schottky diode (GSD) were investigated. The GSD shows the 1/ ${f}$ noise behavior, and the noise origin depends on the operating current ( ${I}_{\text{D}}$ ) of the GSD. The 1/ ${f}$ noise is mainly generated by the barrier height fluctuation near the metal-semiconductor interface at the reverse Schottky diode (SD) in the low ${I}_{\text{D}}$ region, and by the carrier number fluctuation (CNF) at the ${n}$ -type FET in the high ${I}_{\text{D}}$ region. The LFN characteristics in the low $I_{\text{D}}$ region are strongly affected by the temperature. With increasing temperature, the transition of the $1/f$ noise origin from the reverse SD to the $n$ -type FET occurs at lower $I_{\text{D}}$ .