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D. Kim
D. Kim
Ramtron International
Non-volatile memory
CMOS
Electronic engineering
Ferroelectricity
Capacitor
4
Papers
35
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Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
2010
IRPS | International Reliability Physics Symposium
J. Rodriguez
K. Remack
J. Gertas
L. Wang
C. Zhou
K. Boku
J. Rodriguez-Latorre
K. R. Udayakumar
Scott R. Summerfelt
Theodore S. Moise
D. Kim
J. Groat
J. Eliason
M. Depner
F. Chu
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Citations (20)
Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS
2008
ISAF | International Symposium on Applications of Ferroelectrics
J. Rodriguez
K. Remack
J. Gertas
K. Boku
K. R. Udayakumar
Scott R. Summerfelt
Gregory B. Shinn
A. Haider
Sudhir K. Madan
Hugh P. McAdams
Theodore S. Moise
R. Bailey
J. Eliason
M. Depner
D. Kim
P. Staubs
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Citations (2)
High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process
2007
ISAF | International Symposium on Applications of Ferroelectrics
Scott R. Summerfelt
Theodore S. Moise
K. R. Udayakumar
K. Boku
K. Remack
J. Rodriguez
J. Gertas
Hugh P. McAdams
Sudhir K. Madan
J. Eliason
J. Groat
D. Kim
P. Staubs
M. Depner
R. Bailey
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Citations (5)
FRAM memory technology - advantages for low power, fast write, high endurance applications
2005
ICCD | International Conference on Computer Design
R. Bailey
G. Fox
J. Eliason
M. Depner
D. Kim
E. Jabillo
J. Groat
J. Walbert
Theodore S. Moise
Scott R. Summerfelt
K. R. Udayakumar
J Rodriquez
K. Remack
K. Boku
J. Gertas
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Citations (8)
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