Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS

Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates 10 year, 85°C operating life. No fails were observed with full-chip endurance test to 108 cycles followed by 1,000 hours of data retention bake at 125°C. Robust process reliability is demonstrated with no fails at 125°C operating life test.