Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

We present results of a comprehensive reliability evaluation of a 2T–2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4×10 13 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.