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J. Rodriguez-Latorre
J. Rodriguez-Latorre
Texas Instruments
Electronic engineering
CMOS
Non-volatile memory
Random access
Data retention
4
Papers
47
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Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology
2015
REDW | Radiation Effects Data Workshop
B. A. Dahl
J. Cruz-Colon
R. C. Baumann
J. Rodriguez
C. Zhou
J. Rodriguez-Latorre
S. Khan
Tamer San
Thang Trinh
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Citations (5)
180nm FRAM reliability demonstration with ten years data retention at 125°C
2013
IRPS | International Reliability Physics Symposium
J. Rodriguez
J. Rodriguez-Latorre
C. Zhou
Archana Venugopal
Antonio Guillermo Acosta
M. Ball
P. Ndai
Sudhir K. Madan
Hugh P. McAdams
K. R. Udayakumar
Scott R. Summerfelt
Tamer San
Theodore S. Moise
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Citations (6)
Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
2013
IMW | International Memory Workshop
K. R. Udayakumar
Tamer San
J. Rodriguez
S. Chevacharoenkul
D. Frystak
J. Rodriguez-Latorre
C. Zhou
M. Ball
P. Ndai
Sudhir K. Madan
Hugh P. McAdams
Scott R. Summerfelt
Theodore S. Moise
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Citations (16)
Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
2010
IRPS | International Reliability Physics Symposium
J. Rodriguez
K. Remack
J. Gertas
L. Wang
C. Zhou
K. Boku
J. Rodriguez-Latorre
K. R. Udayakumar
Scott R. Summerfelt
Theodore S. Moise
D. Kim
J. Groat
J. Eliason
M. Depner
F. Chu
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