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B. Mathieu

Commissariat à l'énergie atomique et aux énergies alternatives

26

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208

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Towards 500°C SPER activated devices for 3D sequential integration

2017 S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
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Design technology co-optimization of 3D-monolithic standard cells and SRAM exploiting dynamic back-bias for ultra-low-voltage operation

2017 IEDM | International Electron Devices Meeting
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Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells

2017 ISVLSI | IEEE Computer Society Annual Symposium on VLSI
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Thermal effects in 3D sequential technology

2017 IEDM | International Electron Devices Meeting
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Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond laser annealing

2016 IWJT | International Workshop on Junction Technology
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Recent advances in low temperature process in view of 3D VLSI integration

2016
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Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

2016 Materials Science in Semiconductor Processing
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Smart solutions for efficient dual strain integration for future FDSOI generations

2016 VLSIT | Symposium on VLSI Technology
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3次元逐次統合内の高い幾つか相互接続安定性を保存する接合活性化のためのNsレーザアニーリング【Powered by NICT】

2016
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Recent advances in low temperature process in view of 3D VLSI integration

2016 S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
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Citations (7)