author-photo

F. Mazen

Commissariat à l'énergie atomique et aux énergies alternatives

20

Papers

280

Citations

Citation Trend

Filter By

Papers (15) Sort By

Journal Conference Others

Towards 500°C SPER activated devices for 3D sequential integration

2017 S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Show All
- Source
- Cite
- Save
Citations (1)
Fracture in Epitaxial InP on Si for InGaAs on Insulator Fabrication via Smart Cut

2016
Show All
- Source
- Cite
- Save
Citations (0)
InGaAs-OI Substrate Fabrication on a 300 mm Wafer

2016 Journal of Low Power Electronics and Applications
Show All
- Source
- Cite
- Save
Citations (1)
High performance CMOS FDSOI devices activated at low temperature

2016 VLSIT | Symposium on VLSI Technology
Show All
- Source
- Cite
- Save
Citations (10)
300 mm InGaAsOI substrate fabrication using the Smart Cut TM technology

2015 S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Show All
- Source
- Cite
- Save
Citations (1)
Development of microcracks in hydrogen-implanted silicon substrates

2013 Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (17)
Nanoscale organization by elastic interactions between H and He platelets in Si

2013 Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (5)
Smart Cut™: Review on an attractive process for innovative substrate elaboration

2012 Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
Show All
- Source
- Cite
- Save
Citations (7)
Si film separation obtained by high energy proton implantation

2012
Show All
- Source
- Cite
- Save
Citations (0)
Si exfoliation by MeV proton implantation

2012 Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
Show All
- Source
- Cite
- Save
Citations (8)