Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

Abstract The amorphization by implantation of strained silicon–germanium epitaxial layers is investigated by experiments and simulation according to the germanium content in the film and the implantation conditions. Experimental results are used to calibrate a numerical model based on a combined approach between a Binary Collision Approximation (BCA) module and a kinetic Monte Carlo (kMC) module. The calibration is implemented in the Synopsys Sentaurus Process simulator and a close agreement between simulations and experiments is shown. Experimental results show that by increasing the germanium concentration, amorphous thickness is reduced for high energy implantations. Germanium content seems to have less impact at low energy implantations.