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X. Bossy
X. Bossy
STMicroelectronics
Lithography
Materials science
Next-generation lithography
Nanotechnology
CMOS
4
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12
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Hydrogen silsesquioxane tri-dimensional advanced patterning concepts for high density of integration in sub-7 nm nodes
2017
EUROSOI-ULIS | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
L. Gaben
V. Balan
C. Euvrard
S. Pauliac
Jacques-Alexandre Dallery
Jessy Bustos
R. Dechanoz
B. Hemard
L. Koscianski
X. Bossy
C. Arvet
C. Vizioz
S. Barnola
C. Perrot
J. Sturm
Y. Exbrayat
V. Loup
P. Besson
B Perrin
B. Previtali
M.-P. Samson
S. Barraud
S. Monfray
F. Bœuf
T. Skotnicki
Francis Balestra
M. Vinet
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HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.
2016
The Japan Society of Applied Physics
L. Gaben
S. Pauliac
Jacques-Alexandre Dallery
J. Bustos
R. Dechanoz
B. Hemard
L. Koscianski
X. Bossy
M.-P. Samson
S. Barraud
Stephane Monfray
Frédéric Boeuf
Thomas Skotnicki
Francis Balestra
M. Vinet
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Manufacturing concerns for advanced CMOS circuit realization EBDW alternative solution for cost and cycle time reductions
2004
Laurent Pain
M. Jurdit
Yves Laplanche
J. Todeschini
Serdar Manakli
G. Bervin
R. Palla
A. Beverina
R. Faure
X. Bossy
H. Leininger
S. Tourniol
M. Broekaart
F. Judong
K. Brosselin
P. Gouraud
Veronique De Jonghe
Daniel Henry
M. Woo
P. Stolk
B. Tavel
F. Arnaud
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65 nm device manufacture using shaped E-Beam lithography
2003
MNC | International Microprocesses and Nanotechnology Conference
Laurent Pain
Murielle Charpin
Yves Laplanche
J. Todeschini
H. Leininger
S. Tourniol
R. Faure
X. Bossy
R. Palla
A. Beverina
M. Broekaart
F. Judong
K. Brosselin
Y. Le Friec
F. Leverd
V. De Jonghe
E. Josse
O. Hinsinger
P. Brun
Daniel Henry
M. Woo
P. Stolk
F. Arnaud
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Citations (8)
1