Mask absorber for next generation EUV lithography

In this paper we propose several candidates as novel EUV lithography mask absorbers, namely TaTeN, RuTa, and PtMo. The choice of these materials is based on EUV imaging simulation based on their complex refractive index n and k. The physical and chemical characterization of these materials target the requirements of an EUVL mask: durability for mask cleaning, mask lifetime and etchability for mask patterning. Additional information such as uniformity and surface oxidation will help with precise mask stack model building for rigorous simulation using the proposed materials and support the application of predictive mask models in OPC and other applications.