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G.S. Stagaman
G.S. Stagaman
STMicroelectronics
Electronic engineering
Electrical engineering
Transistor
Static random-access memory
Resistor
2
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A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process
1991
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
R. Sundaresan
Che Chia Wei
Mehdi Zamanian
F.S. Chen
R.O. Miller
Robert Louis Hodges
W. Gaskins
Pervez Hassan Sagarwala
L. Nguyen
J. Huang
Charles R. Spinner
G.S. Stagaman
L. Lu
Y.S. Lin
Frank Randolph Bryant
Fu-Tai Liou
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A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process
1991
VLSIT | Symposium on VLSI Technology
R. Sundaresan
Che Chia Wei
Mehdi Zamanian
F.S. Chen
R.O. Miller
Robert Louis Hodges
W. Gaskins
Pervez Hassan Sagarwala
L. Nguyen
J. Huang
Charles R. Spinner
G.S. Stagaman
W. Hata
Y.S. Lin
Frank Randolph Bryant
Fu-Tai Liou
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