A 0.5 mu m diode load 4 Mb SRAM technology using double-level Al plug metal process

A 4 Mb SRAM technology using 0.5 mu m transistors with 12.5 nm gate oxide, TiN local interconnection, polysilicon diode loads, and Al plug double level metallization is described. The use of diode load yields T Omega polysilicon resistors whose values are nearly independent of geometry. Complete filling of 0.6 mu m contacts and vias are obtained using Al plug metallization. >