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A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process
A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process
1991
R. Sundaresan
Che Chia Wei
Mehdi Zamanian
F.S. Chen
R.O. Miller
Robert Louis Hodges
W. Gaskins
Pervez Hassan Sagarwala
L. Nguyen
J. Huang
Charles R. Spinner
G.S. Stagaman
W. Hata
Y.S. Lin
Frank Randolph Bryant
Fu-Tai Liou
Keywords:
Engineering
Electronic engineering
Electrical engineering
Transistor
Static random-access memory
Resistor
Spark plug
Tin
Metal
Diode
random access memory
Correction
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