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C. Lim
C. Lim
SEMATECH
Materials science
Gate dielectric
Gate oxide
Electronic engineering
Optoelectronics
7
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102
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Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties
2003
C. Lim
Y. Kim
Tuo-Hung Hou
J. Gutt
Steven Marcus
Christophe F. Pomarede
Eric Shero
Henk de Waard
C. Werkhoven
Chen Lee
Jihane Tamim
Nirmal Chaudhary
Gennadi Bersuker
Joel Barnett
Chadwin D. Young
Peter Zeitzoff
George A. Brown
Mark Gardner
Robert W. Murto
Howard R. Huff
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Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer
2003
VLSIT | Symposium on VLSI Technology
Yudong Kim
C. Lim
Chadwin D. Young
K. Matthews
Joel Barnett
Brendan Foran
A. Agarwal
George A. Brown
G. Bersuker
P. Zeitzoff
M. Gardner
Robert W. Murto
Larry Larson
C Metzner
S. Kher
Howard R. Huff
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Citations (19)
Charges in HFO2 ALD gate dielectrics
2003
G. Bersuker
P. Zeitzoff
George A. Brown
Y. Kim
A. Hou
C. Lim
Chadwin D. Young
P Lysaght
M. Gardner
R.W. Murto
Howard R. Huff
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Plasma nitridation of very thin gate dielectrics
2001
Microelectronic Engineering
Husam N. Alshareef
Gennadi Bersuker
C. Lim
Robert W. Murto
S. Borthakur
George A. Brown
Howard R. Huff
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Citations (9)
1