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Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties
Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties
2003
C. Lim
Y. Kim
Tuo-Hung Hou
J. Gutt
Steven Marcus
Christophe F. Pomarede
Eric Shero
Henk de Waard
C. Werkhoven
Chen Lee
Jihane Tamim
Nirmal Chaudhary
Gennadi Bersuker
Joel Barnett
Chadwin D. Young
Peter Zeitzoff
George A. Brown
Mark Gardner
Robert W. Murto
Howard R. Huff
Keywords:
Materials science
MOSFET
Deposition (chemistry)
plasma treatment
sequence
Analytical chemistry
Correction
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