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Hiroshi Matsushita
Hiroshi Matsushita
Materials science
Ion implantation
Atomic physics
Doping
Beam (structure)
5
Papers
6
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Momentum Transfer Implantation for Sidewall Doping of FinFET's
2010
The Japan Society of Applied Physics
Genshu Fuse
Michiro Sugitani
Hiroshi Matsushita
Hiroki Murooka
Masashi Kuriyama
Masaru Tanaka
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Arrangement of beam shaping device and Strahlablenkgerät, Strahlablenkverfahren, ion implantation method and ion implantation system
2005
Hiroshi Matsushita
Mitsuaki Kabasawa
Yoshitaka Amano
Yasuhiko Kimura
Mitsukuni Tsukihara
Junichi Murakami
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Germanium operation on the GSDIII/LED and ultra high current ion implanters
2002
Brian S. Freer
Hans Rutishauser
Daniel R. Tieger
Michael A. Graf
Meela Stone
Alex S. Perel
Hiroshi Matsushita
Hiroyuki Muto
Mitsuaki Kabasawa
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Development of a 2.45 GHz electron cyclotron resonance ion source for ion-implanter application
1998
Review of Scientific Instruments
M. Sekiguchi
Hiroshi Matsushita
I. Jonoshita
Mitsuaki Kabasawa
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Development of a 2.45-GHz ECR ion source for ion-implanter application
1997
Minoru Sekiguchi
Hiroshi Matsushita
I. Jonoshita
Mitsuaki Kabasawa
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