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J.C. Birbeck
J.C. Birbeck
Defence Evaluation and Research Agency
Optoelectronics
Wide-bandgap semiconductor
Electronic engineering
Materials science
Gallium nitride
7
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311
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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
2002
IEEE Electron Device Letters
Martin Kuball
Jm Hayes
Michael J. Uren
I. Martin
J.C. Birbeck
R.S. Balmer
B.T. Hughes
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Citations (298)
Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs
2001
Journal of Crystal Growth
Michael J. Uren
D. Lee
B.T. Hughes
P. J. M. Parmiter
J.C. Birbeck
R.S. Balmer
Trevor P. Martin
R.H. Wallis
S.K. Jones
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Citations (8)
The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation
2000
Contact Lens and Anterior Eye
R A Davies
D.J. Bazley
S.K. Jones
H.A. Lovekin
W.A. Phillips
R.H. Wallis
J.C. Birbeck
T. Martin
Michael J. Uren
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Citations (4)
GaN/AlGaN HFETs fabricated on a SiC substrate
2000
Contact Lens and Anterior Eye
Michael J. Uren
Trevor P. Martin
J.C. Birbeck
R.S. Balmer
B.T. Hughes
J.J. Guest
A.J. Hydes
H. Willis
T. Jelfs
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