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Michael J. Uren

University of Bristol
Qinetiq
University of St Andrews

349

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7836

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Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 IEEE Transactions on Electron Devices
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Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

2021
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UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping

2021 Applied Physics Letters
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Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

2021 Semiconductor Science and Technology
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Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond

2021 IEEE Transactions on Electron Devices
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Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs

2021 Japanese Journal of Applied Physics
- Michael J. Uren
- Martin Kuball
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Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

2021 IEEE Transactions on Electron Devices
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Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer

2020
- Michael J. Uren
- Martin Kuball
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GaN-on-diamond technology platform: bonding-free membrane manufacturing process

2020 AIP Advances
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Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

2020 Semiconductor Science and Technology
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