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R.H. Wallis
R.H. Wallis
Defence Evaluation and Research Agency
Optoelectronics
Gallium nitride
Field-effect transistor
Heterojunction
Wide-bandgap semiconductor
5
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31
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A comparison of commercial sources of epitaxial material for GaN HFETs fabrication
2001
Journal of Crystal Growth
R.H. Wallis
R A Davies
S.K. Jones
R Beanland
W.A. Phillips
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Citations (5)
Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs
2001
Journal of Crystal Growth
Michael J. Uren
D. Lee
B.T. Hughes
P. J. M. Parmiter
J.C. Birbeck
R.S. Balmer
Trevor P. Martin
R.H. Wallis
S.K. Jones
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Citations (8)
The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation
2000
Contact Lens and Anterior Eye
R A Davies
D.J. Bazley
S.K. Jones
H.A. Lovekin
W.A. Phillips
R.H. Wallis
J.C. Birbeck
T. Martin
Michael J. Uren
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Citations (4)
1