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Ryunosuke Honda

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A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

2019 IEEE Journal of the Electron Devices Society
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P‐4: Electrical Characteristics of Dual‐Gate CAAC‐IGZO FET with Self‐Aligned Top Gate

2016
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20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current

2015 IEDM | International Electron Devices Meeting
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