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Yoshinobu Asami
Yoshinobu Asami
Field-effect transistor
Trench
Crystal
Optoelectronics
Oxide
4
Papers
19
Citations
0
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2024
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Properties of c-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process
2016
Japanese Journal of Applied Physics
Yoshinobu Asami
Motomu Kurata
Yutaka Okazaki
Eiji Higa
Daisuke Matsubayashi
Satoru Okamoto
Shinya Sasagawa
Tomoaki Moriwaka
Tetsuya Kakehata
Yuto Yakubo
Kiyoshi Kato
Takashi Hamada
Masayuki Sakakura
Masahiko Hayakawa
Shunpei Yamazaki
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20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current
2015
IEDM | International Electron Devices Meeting
Daisuke Matsubayashi
Yoshinobu Asami
Yutaka Okazaki
Motomu Kurata
Shinya Sasagawa
Satoru Okamoto
Y. Iikubo
T. Sato
Yuto Yakubo
Ryunosuke Honda
Masashi Tsubuku
Masashi Fujita
T. Takeuchi
Y Yamamoto
Shunpei Yamazaki
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Citations (18)
Trench Gate Process for 60-nm-Node C-Axis Aligned Crystalline In-Ga-Zn-O Field-Effect Transistors
2015
Yoshinobu Asami
A. Shimomura
Yutaka Okazaki
Daisuke Matsubayashi
Masashi Tsubuku
Motomu Kurata
Satoru Okamoto
S. Sasagwa
Tomoaki Moriwaka
Tetsuya Kakehata
Yuto Yakubo
Kiyoshi Kato
Y Yamamoto
Shunpei Yamazaki
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Halbleiteranordnung und deren Herstellungsverfahren
2006
Tsuenori Suzuki
Ryoji Nomura
Mikio Yukawa
Nobuhara Ohsawa
Tamae Takano
Yoshinobu Asami
Takehisa Sato
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