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Tatsuki Koshida
Tatsuki Koshida
Optoelectronics
Materials science
Physics
Leakage (electronics)
Memory cell
4
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6
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0
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3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm
2019
IEDM | International Electron Devices Meeting
Masashi Oota
Ryota Hodo
Takayuki Ikeda
Shunpei Yamazaki
Yoshinori Ando
Kazuki Tsuda
Tatsuki Koshida
Satoru Oshita
Akio Suzuki
Kunihiro Fukushima
Shuhei Nagatsuka
Tatsuya Onuki
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A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
2019
IEEE Journal of the Electron Devices Society
Hitoshi Kunitake
Kazuaki Ohshima
Kazuki Tsuda
Noriko Matsumoto
Tatsuki Koshida
Satoru Ohshita
Hiromi Sawai
Yuichi Yanagisawa
Shiori Saga
Ryo Arasawa
Takako Seki
Ryunosuke Honda
Haruyuki Baba
Daigo Shimada
Hajime Kimura
Ryo Tokumaru
Tomoaki Atsumi
Kiyoshi Kato
Shunpei Yamazaki
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Inverter Using CAAC-IGZO FET with 60-nm Gate Length Fabricated in BEOL
2019
Hitoshi Kunitake
Tatsuki Koshida
Kazuaki Ohshima
Kazuki Tsuda
N. Matsumoto
Satoru Ohshita
Y. Okazaki
Tsutomu Murakawa
Tomoaki Atsumi
T. Nakura
K. Kato
S Yamazaki
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Magnetic properties of Au nanoclusters protected by organic molecules
2016
The Japan Society of Applied Physics
Tatsuki Koshida
Akira Matsuo
Yoshiyuki Yamamoto
Tadashi Saitoh
Mitsuru Inada
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