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R. Y. Su

TSMC

16

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222

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High-Capacitance-Density ${p}$ -GaN Gate Capacitors for High-Frequency Power Integration

2018 IEEE Electron Device Letters
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Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

2017 IEEE Electron Device Letters
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A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

2015 IEDM | International Electron Devices Meeting
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CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications

2014 IEDM | International Electron Devices Meeting
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AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability

2014 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Improved trap-related characteristics on SiN x /AlGaN/GaN MISHEMTs with surface treatment

2014 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Design of 700V LIGBT with the suppressed substrate current in a 0.5um junction isolated technology

2012 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Analysis of Double Hump Substrate Current in NLDMOSFET

2010 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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State-of-the-art device in high voltage power ICs with lowest on-state resistance

2010 IEDM | International Electron Devices Meeting
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International Symposium on VLSI Technology, Systems, and Applications, Proceedings , art. no. 4530820 , pp. 105-108

2008
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