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C. J. Yu

TSMC

2

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7

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AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability

2014 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Improved trap-related characteristics on SiN x /AlGaN/GaN MISHEMTs with surface treatment

2014 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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