State-of-the-art device in high voltage power ICs with lowest on-state resistance

High performance LDMOS of 600–800V Vbdss has been developed with PB (Pbody)_Extension RESURF scheme for smart power applications. This device design demonstrates the lowest specific on-state resistance against to the latest publications (40% improvement than triple RESURF, 65% improvement than double RESURF in JI LDMOSFET) in 600–800V families and breaks 1-D silicon limit. This technology also surpasses the performance in thin SOI technology, yet it uses the bulk Si material and less manufacturing processing steps.