Design of 700V LIGBT with the suppressed substrate current in a 0.5um junction isolated technology

In this paper, a 700V lateral insulated gate bipolar transistor (LIGBT) design is proposed in a junction-isolated technology. Several key properties of LIGBT, such as hole injection leakage and breakdown-voltage, are investigated by using two-dimensional numerical simulator, MEDICI. To improve vertical junction isolation capability, an extra BLN (Buried-Layer N-type) layer is inserted in-between the BLP (Buried-Layer P-type) and the P-substrate, to enhance hole potential barrier and to block substrate leakage as well as to ensure high breakdown voltage (>700V). An optimized LIGBT with high breakdown-voltage, very low substrate-leakage (<0.1uA/um), and low switching turn-off time, are presented and analyzed.