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J. Petry
J. Petry
NXP Semiconductors
Metal gate
Analytical chemistry
Leakage (electronics)
Threshold voltage
Materials science
5
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17
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Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks
2007
Microelectronic Engineering
Isabelle Ferain
Luigi Pantisano
Anil Kottantharayil
J. Petry
Lionel Trojman
Nadine Collaert
M. Jurczak
K. De Meyer
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Citations (10)
Performance enhancement of Poly-Si/TiN/SiON based pMOSFETs by addition of an aluminum oxide (AlO) capping layer
2007
Microelectronic Engineering
R. Singanamalla
H. Yu
B.J. O'Sullivan
J. Petry
Abdelkarim Mercha
Vasile Paraschiv
Henny Volders
S. Kubicek
K. De Meyer
S. Biesemans
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Reliability degradation of HfSiO gate dielectric layers: influence of nitridation
2007
Microelectronic Engineering
G. Vellianitis
J. Petry
J. Hooker
Annelies Delabie
S. De Gendt
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Effect of degas before metal gate deposition on the threshold voltage
2007
Microelectronic Engineering
J. Petry
K. Xiong
L.-A. Ragnarsson
R. Singanamalla
J. Hooker
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Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm pMOSFET Devices
2006
IEDM | International Electron Devices Meeting
R. Singanamalla
C. Ravit
G. Vellianitis
J. Petry
Vasile Paraschiv
J.P. vanZijl
S. Brus
Marcel A. Verheijen
R. G. R. Weemaes
Monja Kaiser
J.G.M. vanBerkum
P. Bancken
Rita Vos
HongYu Yu
Kristin DeMeyer
Stefan Kubicek
S. Biesemans
J.C. Hooker
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Citations (3)
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