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HongYu Yu
HongYu Yu
IMEC
Dielectric
Electronic engineering
CMOS
Optoelectronics
Gate dielectric
2
Papers
10
Citations
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Demonstration of a New Approach Towards 0.25V Low-Vt CMOS Using Ni-Based FUSI
2006
VLSIT | Symposium on VLSI Technology
HongYu Yu
Jorge Kittl
A. Lauwers
R. Singanamalla
C. Demeurisse
Stefan Kubicek
E. Augendre
Anabela Veloso
S. Brus
C. Vrancken
T. Y. Hoffmann
S. Mertens
Bart Onsia
R. Verbeeck
M. Demand
Aude Rothchild
B. Froment
M.J.H. van Dal
K. De Meyer
Ming-Fu Li
J.D. Chen
Malgorzata Jurczak
P. P. Absil
S. Biesemans
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Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm pMOSFET Devices
2006
IEDM | International Electron Devices Meeting
R. Singanamalla
C. Ravit
G. Vellianitis
J. Petry
Vasile Paraschiv
J.P. vanZijl
S. Brus
Marcel A. Verheijen
R. G. R. Weemaes
Monja Kaiser
J.G.M. vanBerkum
P. Bancken
Rita Vos
HongYu Yu
Kristin DeMeyer
Stefan Kubicek
S. Biesemans
J.C. Hooker
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Citations (3)
1